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A Product Line of
Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm package footprint, 10 times smaller than SOT23
V (BR)DSS
30V
R DS(on)
460m Ω @ V GS = 4.5V
560m Ω @ V GS = 2.5V
I D
T A = 25 ° C
0.9A
0.7A
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0.5mm ultra low profile package for thin application
2
Low V GS(th), can be driven directly from a battery
Low R DS(on)
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
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?
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
? Case: DFN1006-3
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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?
Load switch
Portable applications
Power Management Functions
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Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
DFN1006-3
Body
D
S
G
Gate
Gate
Diode
ESD PROTECTED TO 2kV
Bottom View
Top View
Protection
Diode
Source
Ordering Information (Note 3)
Internal Schematic
Equivalent Circuit
Part Number
DMN3730UFB-7
DMN3730UFB-7B
Marking
NE
NE
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN3730UFB-7
DMN3730UFB-7B
NE
Top View
Dot Denotes
Drain Side
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
NE
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
NE = Product Type Marking Code
March 2011
? Diodes Incorporated
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